BD439G
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- Mfr.Part #
- BD439G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A TO126
- Stock
- 17,489
- In Stock ：
- 17,489
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BD439
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Max Power Dissipation :
- 36W
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 60V
- Max Collector Current :
- 4A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 800mV
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Transistor Type :
- NPN
- Published :
- 2005
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Frequency :
- 3MHz
- Power Dissipation :
- 36W
- Surface Mount :
- No
- hFE Min :
- 20
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 60V
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Transition Frequency :
- 3MHz
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current Rating :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Datasheets
- BD439G
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD439G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD439G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD439G Applications
There are a lot of ON Semiconductor
BD439G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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