BD439
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- Mfr.Part #
- BD439
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A TO126
- Stock
- 18,760
- In Stock ：
- 18,760
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BD439
- Collector Emitter Saturation Voltage :
- 800mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 20
- Contact Plating :
- Tin
- Package / Case :
- TO-225AA, TO-126-3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Max Collector Current :
- 4A
- Transition Frequency :
- 3MHz
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Elements :
- 1
- Current Rating :
- 4A
- Published :
- 2005
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 3MHz
- Power Dissipation :
- 36W
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- Pbfree Code :
- yes
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 60V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 36W
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Datasheets
- BD439
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD439G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD439G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD439G Applications
There are a lot of ON Semiconductor
BD439G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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