BD439
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- Mfr.Part #
- BD439
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 4A TO126
- Stock
- 18,760
- In Stock ：
- 18,760
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 1V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 60V
- Packaging :
- Bulk
- Published :
- 2005
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BD439
- Element Configuration :
- Single
- hFE Min :
- 20
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Power Dissipation :
- 36W
- Number of Elements :
- 1
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 36W
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 4A
- Collector Emitter Breakdown Voltage :
- 60V
- Gain Bandwidth Product :
- 3MHz
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 800mV
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Transistor Application :
- SWITCHING
- Datasheets
- BD439
BD439 Documents
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD439G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 500mA 1V DC current gain.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
BD439G Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD439G Applications
There are a lot of ON Semiconductor
BD439G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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