BD438STU
- Mfr.Part #
- BD438STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A TO126-3
- Stock
- 2,547
- In Stock :
- 2,547
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Collector Base Voltage (VCBO) :
- -45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- hFE Min :
- 40
- Max Power Dissipation :
- 36W
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Length :
- 8mm
- Packaging :
- Tube
- Number of Pins :
- 3
- Power Dissipation :
- 36W
- Voltage - Rated DC :
- -45V
- Collector Emitter Saturation Voltage :
- -200mV
- Published :
- 2001
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -4A
- Transition Frequency :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- Frequency :
- 3MHz
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 761mg
- Base Part Number :
- BD438
- Max Collector Current :
- 4A
- Height :
- 11mm
- Transistor Type :
- PNP
- Width :
- 3.25mm
- Gain Bandwidth Product :
- 3MHz
- Datasheets
- BD438STU
BD438STU Documents

PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438STU Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD438STU Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD438STU Applications
There are a lot of ON Semiconductor
BD438STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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