BD438STU
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- Mfr.Part #
- BD438STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A TO126-3
- Stock
- 2,547
- In Stock ：
- 2,547
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -5V
- Height :
- 11mm
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -45V
- Gain Bandwidth Product :
- 3MHz
- Base Part Number :
- BD438
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -45V
- Factory Lead Time :
- 2 Weeks
- Mount :
- Through Hole
- Max Collector Current :
- 4A
- Transistor Type :
- PNP
- Collector Emitter Saturation Voltage :
- -200mV
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Weight :
- 761mg
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 36W
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2001
- Power Dissipation :
- 36W
- Current - Collector Cutoff (Max) :
- 100μA
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Current Rating :
- -4A
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- Width :
- 3.25mm
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Transition Frequency :
- 3MHz
- Length :
- 8mm
- hFE Min :
- 40
- Datasheets
- BD438STU
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438STU Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD438STU Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD438STU Applications
There are a lot of ON Semiconductor
BD438STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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