BD438STU

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Mfr.Part #
BD438STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 45V 4A TO126-3
Stock
2,547
In Stock :
2,547

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Vce Saturation (Max) @ Ib, Ic :
600mV @ 200mA, 2A
Collector Base Voltage (VCBO) :
-45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10mA 5V
Lead Free :
Lead Free
Element Configuration :
Single
hFE Min :
40
Max Power Dissipation :
36W
Operating Temperature :
150°C TJ
Pbfree Code :
yes
JESD-609 Code :
e3
Polarity/Channel Type :
PNP
Factory Lead Time :
2 Weeks
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
45V
Length :
8mm
Packaging :
Tube
Number of Pins :
3
Power Dissipation :
36W
Voltage - Rated DC :
-45V
Collector Emitter Saturation Voltage :
-200mV
Published :
2001
Number of Terminations :
3
Collector Emitter Voltage (VCEO) :
45V
Emitter Base Voltage (VEBO) :
-5V
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Current Rating :
-4A
Transition Frequency :
3MHz
Package / Case :
TO-225AA, TO-126-3
Frequency :
3MHz
Contact Plating :
Tin
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100μA
Mount :
Through Hole
Radiation Hardening :
No
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Weight :
761mg
Base Part Number :
BD438
Max Collector Current :
4A
Height :
11mm
Transistor Type :
PNP
Width :
3.25mm
Gain Bandwidth Product :
3MHz
Introducing Transistors - Bipolar (BJT) - Single onsemi BD438STU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Base Part Number:BD438, BD438STU pinout, BD438STU datasheet PDF, BD438STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD438STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD438STU


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD438STU Overview


In this device, the DC current gain is 30 @ 10mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

BD438STU Features


the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD438STU Applications


There are a lot of ON Semiconductor
BD438STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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