BD438STU
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- Mfr.Part #
- BD438STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- POWER BIPOLAR TRANSISTOR, 4A, 45
- Stock
- 2,547
- In Stock ：
- 2,547
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -200mV
- Collector Base Voltage (VCBO) :
- -45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Height :
- 11mm
- Width :
- 3.25mm
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-225AA, TO-126-3
- Emitter Base Voltage (VEBO) :
- -5V
- Packaging :
- Tube
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- hFE Min :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Current Rating :
- -4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Voltage - Rated DC :
- -45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Published :
- 2001
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 36W
- Max Collector Current :
- 4A
- Power Dissipation :
- 36W
- Base Part Number :
- BD438
- Number of Terminations :
- 3
- Frequency :
- 3MHz
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100μA
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Length :
- 8mm
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Weight :
- 761mg
- Datasheets
- BD438STU
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438STU Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD438STU Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD438STU Applications
There are a lot of ON Semiconductor
BD438STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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