BD438
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- Mfr.Part #
- BD438
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A SOT32-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Max Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Collector Base Voltage (VCBO) :
- 45V
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 3MHz
- VCEsat-Max :
- 0.6 V
- ECCN Code :
- EAR99
- Length :
- 7.8mm
- Pin Count :
- 3
- hFE Min :
- 30
- Height :
- 10.8mm
- Transistor Type :
- PNP
- Packaging :
- Tube
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Current - Collector Cutoff (Max) :
- 100μA
- Width :
- 2.7mm
- Power Dissipation :
- 36W
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Case Connection :
- Isolated
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 200mV
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Power Dissipation :
- 36W
- JESD-609 Code :
- e3
- Base Part Number :
- BD438
- Max Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- BD438
BD438 Documents
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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