BD438
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- Mfr.Part #
- BD438
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 4A SOT32-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Packaging :
- Tube
- Collector Base Voltage (VCBO) :
- 45V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Frequency :
- 3MHz
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100μA
- Max Breakdown Voltage :
- 45V
- VCEsat-Max :
- 0.6 V
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Base Part Number :
- BD438
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- 200mV
- Element Configuration :
- Single
- Max Power Dissipation :
- 36W
- Height :
- 10.8mm
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Width :
- 2.7mm
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 36W
- Case Connection :
- Isolated
- Length :
- 7.8mm
- hFE Min :
- 30
- Number of Elements :
- 1
- Datasheets
- BD438
PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD438 Overview
In this device, the DC current gain is 30 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.3MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
BD438 Features
the DC current gain for this device is 30 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD438 Applications
There are a lot of STMicroelectronics
BD438 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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