BD437T

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Mfr.Part #
BD437T
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 45V 4A TO126
Stock
24,809
In Stock :
24,809

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
45V
Polarity/Channel Type :
NPN
Operating Temperature :
-55°C~150°C TJ
hFE Min :
30
Published :
2005
Number of Terminations :
3
Collector Base Voltage (VCBO) :
45V
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Saturation Voltage :
800mV
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
800mV @ 300mA, 3A
Transistor Application :
SWITCHING
Pbfree Code :
yes
Gain Bandwidth Product :
3MHz
Power Dissipation :
36W
Package / Case :
TO-225AA, TO-126-3
Collector Emitter Breakdown Voltage :
45V
Max Power Dissipation :
36W
Terminal Finish :
Tin (Sn)
Mounting Type :
Through Hole
Base Part Number :
BD437
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
4A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e3
Number of Elements :
1
Frequency :
3MHz
Factory Lead Time :
2 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
85 @ 500mA 1V
Voltage - Rated DC :
45V
Lead Free :
Lead Free
Element Configuration :
Single
Current Rating :
4A
Packaging :
Bulk
Pin Count :
3
Transistor Type :
NPN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Transistor Element Material :
SILICON
Transition Frequency :
3MHz
Current - Collector Cutoff (Max) :
100μA ICBO
Datasheets
BD437T
Introducing Transistors - Bipolar (BJT) - Single onsemi BD437T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, Base Part Number:BD437, BD437T pinout, BD437T datasheet PDF, BD437T amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD437T ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD437T


NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole

BD437TG Overview


This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 4A volts is possible.

BD437TG Features


the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz


BD437TG Applications


There are a lot of ON Semiconductor
BD437TG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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