BD437T
- Mfr.Part #
- BD437T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A TO126
- Stock
- 24,809
- In Stock :
- 24,809
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 45V
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 30
- Published :
- 2005
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 45V
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- 800mV
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 3MHz
- Power Dissipation :
- 36W
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 36W
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Base Part Number :
- BD437
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Frequency :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Voltage - Rated DC :
- 45V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Current Rating :
- 4A
- Packaging :
- Bulk
- Pin Count :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 3MHz
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Datasheets
- BD437T
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437TG Overview
This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 300mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 4A volts is possible.
BD437TG Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437TG Applications
There are a lot of ON Semiconductor
BD437TG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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