BD437G
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- Mfr.Part #
- BD437G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A TO126
- Stock
- 50,385
- In Stock ：
- 50,385
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 36W
- Pin Count :
- 3
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2003
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 4A
- Number of Pins :
- 3
- Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BD437
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 45V
- hFE Min :
- 30
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 800mV
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 45V
- Max Power Dissipation :
- 36W
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Current Rating :
- 4A
- Transistor Type :
- NPN
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 3MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Datasheets
- BD437G
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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