BD437G
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- Mfr.Part #
- BD437G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A TO126
- Stock
- 50,385
- In Stock ：
- 50,385
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- hFE Min :
- 30
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- ECCN Code :
- EAR99
- Published :
- 2003
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Surface Mount :
- No
- Max Power Dissipation :
- 36W
- Lead Free :
- Lead Free
- Transition Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Frequency :
- 3MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Current Rating :
- 4A
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Voltage - Rated DC :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Base Part Number :
- BD437
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Power Dissipation :
- 36W
- Collector Emitter Saturation Voltage :
- 800mV
- Element Configuration :
- Single
- Datasheets
- BD437G
BD437G Documents
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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