BD437
- Mfr.Part #
- BD437
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A SOT32-3
- Stock
- 1,529
- In Stock :
- 1,529
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current Rating :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transistor Type :
- NPN
- Power Dissipation :
- 36W
- Radiation Hardening :
- No
- Surface Mount :
- No
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 45V
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Published :
- 2003
- hFE Min :
- 30
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Collector Emitter Saturation Voltage :
- 800mV
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 36W
- Frequency :
- 3MHz
- Gain Bandwidth Product :
- 3MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BD437
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 3MHz
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Datasheets
- BD437
BD437 Documents

NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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