BD437
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- Mfr.Part #
- BD437
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 4A TO126
- Stock
- 27,626
- In Stock ：
- 27,626
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 45V
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 800mV
- Gain Bandwidth Product :
- 3MHz
- Transition Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Voltage - Rated DC :
- 45V
- Frequency :
- 3MHz
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Max Power Dissipation :
- 36W
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Base Part Number :
- BD437
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Max Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 36W
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Current Rating :
- 4A
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 300mA, 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Finish :
- Tin (Sn)
- Published :
- 2003
- hFE Min :
- 30
- Datasheets
- BD437
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD437G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 500mA 1V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 300mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD437G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD437G Applications
There are a lot of ON Semiconductor
BD437G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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