BD436T
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- Mfr.Part #
- BD436T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 4A TO126
- Stock
- 20,925
- In Stock ：
- 20,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Contains Lead
- Voltage - Rated DC :
- -32V
- Max Power Dissipation :
- 36W
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Configuration :
- Single
- Base Part Number :
- BD436
- Max Collector Current :
- 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 32V
- Current Rating :
- -4A
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Published :
- 2005
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Not Qualified
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- 240
- Number of Pins :
- 3
- Transistor Type :
- PNP
- JESD-609 Code :
- e0
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Current - Collector (Ic) (Max) :
- 4A
- Collector Emitter Saturation Voltage :
- 500mV
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Number of Terminations :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 32V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Transition Frequency :
- 3MHz
- Datasheets
- BD436T
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PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD436T Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD436T Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD436T Applications
There are a lot of ON Semiconductor
BD436T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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