BD436T
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- Mfr.Part #
- BD436T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 4A TO126
- Stock
- 20,925
- In Stock ：
- 20,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 32V
- Package / Case :
- TO-225AA, TO-126-3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Base Voltage (VCBO) :
- 32V
- Lead Free :
- Contains Lead
- Collector Emitter Saturation Voltage :
- 500mV
- Transition Frequency :
- 3MHz
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- RoHS Status :
- Non-RoHS Compliant
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Configuration :
- Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 4A
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- Max Collector Current :
- 4A
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Collector Emitter Voltage (VCEO) :
- 500mV
- Voltage - Rated DC :
- -32V
- Terminal Position :
- Single
- Surface Mount :
- No
- Number of Terminations :
- 3
- Current Rating :
- -4A
- Transistor Type :
- PNP
- Max Power Dissipation :
- 36W
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- BD436
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Packaging :
- Tube
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Datasheets
- BD436T
BD436T Documents
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PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD436T Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -4A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
BD436T Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 3MHz
BD436T Applications
There are a lot of ON Semiconductor
BD436T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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