BD436S

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Mfr.Part #
BD436S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 32V 4A TO126-3
Stock
29,771
In Stock :
29,771

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
32V
hFE Min :
50
Contact Plating :
Tin
Frequency :
3MHz
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Max Power Dissipation :
36W
Package / Case :
TO-225AA, TO-126-3
Current Rating :
-4A
Emitter Base Voltage (VEBO) :
-5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 5V
Lead Free :
Lead Free
Pbfree Code :
yes
Transistor Application :
SWITCHING
Element Configuration :
Single
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
32V
Number of Elements :
1
Max Collector Current :
4A
Power Dissipation :
36W
JESD-609 Code :
e3
Factory Lead Time :
2 Weeks
Transistor Type :
PNP
Operating Temperature :
150°C TJ
Polarity/Channel Type :
PNP
Published :
2001
Transition Frequency :
3MHz
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Gain Bandwidth Product :
3MHz
Mount :
Through Hole
Weight :
761mg
Collector Base Voltage (VCBO) :
-32V
Current - Collector Cutoff (Max) :
100μA
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Base Part Number :
BD436
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
ECCN Code :
EAR99
Voltage - Rated DC :
-32V
Datasheets
BD436S
Introducing Transistors - Bipolar (BJT) - Single onsemi BD436S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Operating Temperature:150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD436, BD436S pinout, BD436S datasheet PDF, BD436S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD436S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD436S


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD436S Overview


In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD436S Features


the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD436S Applications


There are a lot of ON Semiconductor
BD436S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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