BD436

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Mfr.Part #
BD436
Manufacturer
STMicroelectronics
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 32V 4A SOT32-3
Stock
238,469
In Stock :
238,469

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
50
Contact Plating :
Tin
Weight :
761mg
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Mount :
Through Hole
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Transistor Type :
PNP
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA 5V
Max Power Dissipation :
36W
Power Dissipation :
36W
Collector Emitter Breakdown Voltage :
32V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 2A
Max Collector Current :
4A
Emitter Base Voltage (VEBO) :
-5V
JESD-609 Code :
e3
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100μA
Packaging :
Bulk
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Gain Bandwidth Product :
3MHz
Pbfree Code :
yes
Element Configuration :
Single
Base Part Number :
BD436
Package / Case :
TO-225AA, TO-126-3
Transition Frequency :
3MHz
Collector Base Voltage (VCBO) :
-32V
Published :
2001
Current Rating :
-4A
Number of Terminations :
3
Voltage - Rated DC :
-32V
Number of Elements :
1
Frequency :
3MHz
Collector Emitter Voltage (VCEO) :
32V
Transistor Application :
SWITCHING
Number of Pins :
3
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD436 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Base Part Number:BD436, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Number of Pins:3, BD436 pinout, BD436 datasheet PDF, BD436 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD436 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD436


PNP 150°C TJ 100μA 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD436S Overview


In this device, the DC current gain is 40 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.

BD436S Features


the DC current gain for this device is 40 @ 10mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 3MHz


BD436S Applications


There are a lot of ON Semiconductor
BD436S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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