BD435STU
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- Mfr.Part #
- BD435STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126-3
- Stock
- 25,720
- In Stock ：
- 25,720
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Base Part Number :
- BD435
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 32V
- Current Rating :
- 4A
- Frequency :
- 3MHz
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Weight :
- 760.986249mg
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 32V
- Gain Bandwidth Product :
- 3MHz
- Power Dissipation :
- 36W
- Packaging :
- Tube
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 32V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Factory Lead Time :
- 12 Weeks
- Voltage :
- 32V
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 32V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 36W
- Published :
- 2017
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Transistor Type :
- NPN
- Transition Frequency :
- 3MHz
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Max Collector Current :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Contact Plating :
- Tin
- Current :
- 4A
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 200mV
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Datasheets
- BD435STU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD435STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor
BD435STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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