BD435STU
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- Mfr.Part #
- BD435STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126-3
- Stock
- 25,720
- In Stock ：
- 25,720
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Published :
- 2017
- Transition Frequency :
- 3MHz
- Max Collector Current :
- 4A
- Factory Lead Time :
- 12 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 32V
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Current Rating :
- 4A
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 200mV
- Power Dissipation :
- 36W
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Current :
- 4A
- hFE Min :
- 40
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 32V
- Max Power Dissipation :
- 36W
- Gain Bandwidth Product :
- 3MHz
- Contact Plating :
- Tin
- Weight :
- 760.986249mg
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 32V
- Voltage :
- 32V
- Base Part Number :
- BD435
- Transistor Type :
- NPN
- Frequency :
- 3MHz
- Voltage - Rated DC :
- 32V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BD435STU
BD435STU Documents
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD435STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor
BD435STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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