BD435STU
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- Mfr.Part #
- BD435STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126-3
- Stock
- 4,640
- In Stock ：
- 4,640
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Current :
- 4A
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 3MHz
- Gain Bandwidth Product :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Power Dissipation :
- 36W
- Weight :
- 760.986249mg
- Collector Emitter Voltage (VCEO) :
- 32V
- Current Rating :
- 4A
- Element Configuration :
- Single
- Voltage :
- 32V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Voltage - Rated DC :
- 32V
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 32V
- Collector Emitter Saturation Voltage :
- 200mV
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Published :
- 2017
- Contact Plating :
- Tin
- hFE Min :
- 40
- Factory Lead Time :
- 12 Weeks
- Frequency :
- 3MHz
- Base Part Number :
- BD435
- Number of Terminations :
- 3
- Max Power Dissipation :
- 36W
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 10mA 5V
- Current - Collector Cutoff (Max) :
- 100μA
- Datasheets
- BD435STU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD435STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 4A volts at its maximum.
BD435STU Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435STU Applications
There are a lot of ON Semiconductor
BD435STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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