BD435G
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- Mfr.Part #
- BD435G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 4A TO126
- Stock
- 14,655
- In Stock ：
- 14,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 36W
- Voltage - Rated DC :
- 32V
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Surface Mount :
- No
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 32V
- Current Rating :
- 4A
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Power Dissipation :
- 36W
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-225AA, TO-126-3
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BD435
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 4A
- Gain Bandwidth Product :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 32V
- Collector Base Voltage (VCBO) :
- 32V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Transition Frequency :
- 3MHz
- Published :
- 2003
- hFE Min :
- 40
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BD435G
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD435G Overview
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).3MHz is present in the transition frequency.Maximum collector currents can be below 4A volts.
BD435G Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
BD435G Applications
There are a lot of ON Semiconductor
BD435G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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