BD239CTU

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Mfr.Part #
BD239CTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 100V 2A TO220-3
Stock
5,456
In Stock :
5,456

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation :
30W
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
100V
Package / Case :
TO-220-3
Lead Free :
Lead Free
ECCN Code :
EAR99
hFE Min :
15
Width :
4.5mm
Length :
9.9mm
Packaging :
Tube
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
NPN
RoHS Status :
ROHS3 Compliant
Collector Emitter Saturation Voltage :
700mV
Published :
2000
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 1A 4V
Current - Collector Cutoff (Max) :
300μA
Collector Emitter Voltage (VCEO) :
100V
Mount :
Through Hole
JESD-609 Code :
e3
Base Part Number :
BD239
Element Configuration :
Single
Qualification Status :
Not Qualified
Voltage - Rated DC :
100V
Number of Elements :
1
Weight :
1.8g
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Breakdown Voltage :
100V
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Transistor Application :
SWITCHING
Contact Plating :
Tin
Number of Terminations :
3
Factory Lead Time :
2 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Height :
15.7mm
Current Rating :
2A
JEDEC-95 Code :
TO-220AB
Max Collector Current :
2A
Max Power Dissipation :
30W
Vce Saturation (Max) @ Ib, Ic :
700mV @ 200mA, 1A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Type :
NPN
Datasheets
BD239CTU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD239CTU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Base Part Number:BD239, Number of Pins:3, Operating Temperature:150°C TJ, Number of Terminations:3, BD239CTU pinout, BD239CTU datasheet PDF, BD239CTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD239CTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD239CTU


NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

BD239CTU Overview


In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

BD239CTU Features


the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


BD239CTU Applications


There are a lot of ON Semiconductor
BD239CTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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