BD239CTU
- Mfr.Part #
- BD239CTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO220-3
- Stock
- 5,456
- In Stock :
- 5,456
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 30W
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-220-3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- hFE Min :
- 15
- Width :
- 4.5mm
- Length :
- 9.9mm
- Packaging :
- Tube
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 700mV
- Published :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Current - Collector Cutoff (Max) :
- 300μA
- Collector Emitter Voltage (VCEO) :
- 100V
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Base Part Number :
- BD239
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 100V
- Number of Elements :
- 1
- Weight :
- 1.8g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Factory Lead Time :
- 2 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 15.7mm
- Current Rating :
- 2A
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 30W
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Datasheets
- BD239CTU

NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239CTU Overview
In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 200mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD239CTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
BD239CTU Applications
There are a lot of ON Semiconductor
BD239CTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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