BD239CTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Current - Collector Cutoff (Max) :

300μA

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 1A 4V

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

4.5mm

Collector Emitter Breakdown Voltage :

100V

Factory Lead Time :

2 Weeks

Power Dissipation :

30W

Transistor Application :

SWITCHING

Mount :

Through Hole

Qualification Status :

Not Qualified

Transistor Type :

NPN

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Emitter Base Voltage (VEBO) :

5V

Height :

15.7mm

Transistor Element Material :

SILICON

Current Rating :

2A

Max Power Dissipation :

30W

Weight :

1.8g

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

100V

Packaging :

Tube

Operating Temperature :

150°C TJ

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

100V

Max Collector Current :

2A

Pbfree Code :

yes

Length :

9.9mm

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

700mV @ 200mA, 1A

Published :

2000

hFE Min :

15

Base Part Number :

BD239

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Package / Case :

TO-220-3

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

700mV