BD234G

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Mfr.Part #
BD234G
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 45V 2A TO126
Stock
262,208
In Stock :
262,208

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Bulk
Base Part Number :
BD234
Power Dissipation :
25W
Gain Bandwidth Product :
3MHz
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Frequency :
3MHz
Factory Lead Time :
2 Weeks
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
600mV
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 2V
Mounting Type :
Through Hole
Number of Pins :
3
JESD-609 Code :
e3
Number of Elements :
1
Package / Case :
TO-225AA, TO-126-3
Number of Terminations :
3
Pin Count :
3
Max Power Dissipation :
25W
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
45V
Terminal Finish :
Tin (Sn)
Max Collector Current :
2A
Collector Base Voltage (VCBO) :
60V
Current Rating :
-2A
Published :
2005
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
-45V
Transition Frequency :
3MHz
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
100μA ICBO
hFE Min :
40
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
45V
Datasheets
BD234G
Introducing Transistors - Bipolar (BJT) - Single onsemi BD234G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BD234, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, BD234G pinout, BD234G datasheet PDF, BD234G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD234G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD234G


PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD234G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

BD234G Features


the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 3MHz


BD234G Applications


There are a lot of ON Semiconductor
BD234G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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