BD236STU
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- Mfr.Part #
- BD236STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO126-3
- Stock
- 42
- In Stock ：
- 42
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 25W
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 2A
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Collector Base Voltage (VCBO) :
- -60V
- Transition Frequency :
- 3MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -60V
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Frequency :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Published :
- 2000
- Weight :
- 761mg
- Collector Emitter Saturation Voltage :
- -600mV
- Polarity/Channel Type :
- PNP
- Current Rating :
- -2A
- Number of Pins :
- 3
- Packaging :
- Tube
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 3MHz
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 25
- Power Dissipation :
- 25W
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Datasheets
- BD236STU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD236STU Overview
In this device, the DC current gain is 25 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).3MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
BD236STU Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD236STU Applications
There are a lot of ON Semiconductor
BD236STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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