BD239C

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

VCEsat-Max :

0.7 V

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Width :

4.6mm

Element Configuration :

Single

Current - Collector Cutoff (Max) :

300μA

Transistor Type :

NPN

Max Collector Current :

2A

Max Power Dissipation :

2W

Vce Saturation (Max) @ Ib, Ic :

700mV @ 200mA, 1A

Collector Emitter Breakdown Voltage :

100V

Mounting Type :

Through Hole

Number of Pins :

3

Mount :

Through Hole

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

100V

Number of Terminations :

3

Pin Count :

3

Transistor Application :

SWITCHING

Base Part Number :

BD239

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 1A 4V

Length :

10.4mm

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Weight :

4.535924g

Collector Base Voltage (VCBO) :

115V

REACH SVHC :

No SVHC

Contact Plating :

Tin

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Height :

9.15mm

JESD-609 Code :

e3

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

700mV

Transistor Element Material :

SILICON

hFE Min :

40

Number of Elements :

1

Polarity/Channel Type :

NPN