BD239C
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- Mfr.Part #
- BD239C
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A TO220
- Stock
- 7,205
- In Stock ：
- 7,205
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.6mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 300μA
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Packaging :
- Tube
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Length :
- 10.4mm
- Package / Case :
- TO-220-3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Height :
- 9.15mm
- Pin Count :
- 3
- Base Part Number :
- BD239
- Contact Plating :
- Tin
- Power Dissipation :
- 2W
- VCEsat-Max :
- 0.7 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Max Collector Current :
- 2A
- Collector Emitter Saturation Voltage :
- 700mV
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 115V
- Max Power Dissipation :
- 2W
- Datasheets
- BD239C
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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