BD239BTU
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- Mfr.Part #
- BD239BTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO220-3
- Stock
- 875
- In Stock ：
- 875
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BD239
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 700mV
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 9.9mm
- Voltage - Rated DC :
- 80V
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 90V
- Collector Emitter Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Published :
- 2000
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Width :
- 4.5mm
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 300μA
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 15.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 30W
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Weight :
- 1.8g
- hFE Min :
- 15
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Power Dissipation :
- 30W
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Current Rating :
- 2A
- Datasheets
- BD239BTU
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239BTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.A maximum collector current of 2A volts can be achieved.
BD239BTU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
BD239BTU Applications
There are a lot of ON Semiconductor
BD239BTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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