BD239ATU
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- Mfr.Part #
- BD239ATU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TO220-3
- Stock
- 10,372
- In Stock ：
- 10,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Mount :
- Through Hole
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.8g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 70V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Published :
- 2000
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Number of Elements :
- 1
- hFE Min :
- 15
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 6 Weeks
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 30W
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 700mV
- Max Collector Current :
- 2A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Power Dissipation :
- 30W
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 300μA
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Base Part Number :
- BD239
- Package / Case :
- TO-220-3
- Datasheets
- BD239ATU
BD239ATU Documents
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239ATU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 2A volts.
BD239ATU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD239ATU Applications
There are a lot of ON Semiconductor
BD239ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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