BD239ATU
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- Mfr.Part #
- BD239ATU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TO220-3
- Stock
- 10,372
- In Stock ：
- 10,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 3MHz
- Base Part Number :
- BD239
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 300μA
- hFE Min :
- 15
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 700mV
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Weight :
- 1.8g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 2A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 70V
- Factory Lead Time :
- 6 Weeks
- Published :
- 2000
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Max Power Dissipation :
- 30W
- Mount :
- Through Hole
- Power Dissipation :
- 30W
- JEDEC-95 Code :
- TO-220AB
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Datasheets
- BD239ATU
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239ATU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 2A volts.
BD239ATU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD239ATU Applications
There are a lot of ON Semiconductor
BD239ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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