BD238STU
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- Mfr.Part #
- BD238STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 2A TO126-3
- Stock
- 7,877
- In Stock ：
- 7,877
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- -100V
- Frequency :
- 3MHz
- Voltage - Rated DC :
- -80V
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Pins :
- 3
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- hFE Min :
- 25
- REACH SVHC :
- No SVHC
- Base Part Number :
- BD238
- Gain Bandwidth Product :
- 3MHz
- Height :
- 11mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Length :
- 8mm
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 25W
- Max Power Dissipation :
- 25W
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Width :
- 3.25mm
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Mount :
- Through Hole
- Weight :
- 761mg
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Published :
- 2000
- Current Rating :
- -2A
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -600mV
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 3MHz
- Datasheets
- BD238STU
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
BD238STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 2V.With a collector emitter saturation voltage of -600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 2A volts at its maximum.
BD238STU Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD238STU Applications
There are a lot of ON Semiconductor
BD238STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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