BD238S

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Mfr.Part #
BD238S
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 80V 2A TO126-3
Stock
8,360
In Stock :
8,360

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Collector Base Voltage (VCBO) :
-100V
Terminal Finish :
Tin (Sn)
Transition Frequency :
3MHz
Number of Pins :
3
hFE Min :
25
Collector Emitter Voltage (VCEO) :
80V
Max Power Dissipation :
25W
Max Collector Current :
2A
Transistor Type :
PNP
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Package / Case :
TO-225AA, TO-126-3
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Power Dissipation :
25W
Gain Bandwidth Product :
3MHz
Mount :
Through Hole
ECCN Code :
EAR99
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Collector Cutoff (Max) :
100μA ICBO
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
-5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 2V
Transistor Application :
SWITCHING
Frequency :
3MHz
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Polarity/Channel Type :
PNP
Current Rating :
-2A
Number of Terminations :
3
Weight :
761mg
Collector Emitter Breakdown Voltage :
80V
Element Configuration :
Single
Base Part Number :
BD238
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Lead Free :
Lead Free
Voltage - Rated DC :
-80V
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single onsemi BD238S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-225AA, TO-126-3, Number of Terminations:3, Base Part Number:BD238, BD238S pinout, BD238S datasheet PDF, BD238S amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD238S ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD238S


PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole

BD238S Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

BD238S Features


the DC current gain for this device is 25 @ 1A 2V
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz


BD238S Applications


There are a lot of ON Semiconductor
BD238S applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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