BD238S

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

25W

Voltage - Rated DC :

-80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 2V

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

3MHz

Power Dissipation :

25W

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Max Collector Current :

2A

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Transistor Application :

SWITCHING

Number of Elements :

1

Frequency :

3MHz

Collector Base Voltage (VCBO) :

-100V

hFE Min :

25

Emitter Base Voltage (VEBO) :

-5V

Current - Collector Cutoff (Max) :

100μA ICBO

ECCN Code :

EAR99

Transition Frequency :

3MHz

Base Part Number :

BD238

Number of Terminations :

3

Transistor Element Material :

SILICON

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

80V

Operating Temperature :

150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

80V

Element Configuration :

Single

Current Rating :

-2A

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Pbfree Code :

yes

Packaging :

Bulk

Package / Case :

TO-225AA, TO-126-3

Weight :

761mg