BD237STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

400V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Transition Frequency :

3MHz

Width :

3.25mm

Number of Terminations :

3

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

80V

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 2V

Length :

8mm

Emitter Base Voltage (VEBO) :

5V

Current - Collector Cutoff (Max) :

100μA ICBO

Transistor Type :

NPN

ECCN Code :

EAR99

Number of Elements :

1

Radiation Hardening :

No

Power Dissipation :

25W

Pbfree Code :

yes

Factory Lead Time :

6 Weeks

Max Power Dissipation :

25W

hFE Min :

25

Current Rating :

2A

Weight :

761mg

Operating Temperature :

150°C TJ

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

80V

Frequency :

3MHz

Transistor Application :

SWITCHING

Max Collector Current :

2A

Package / Case :

TO-225AA, TO-126-3

REACH SVHC :

No SVHC

Base Part Number :

BD237

Mount :

Through Hole

Lifecycle Status :

LIFETIME (Last Updated: 15 hours ago)

Mounting Type :

Through Hole

JESD-609 Code :

e3

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

80V

Published :

2001

Gain Bandwidth Product :

3MHz

Height :

11mm

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Collector Emitter Saturation Voltage :

600mV