BD237STU
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- Mfr.Part #
- BD237STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO126-3
- Stock
- 5,611
- In Stock ：
- 5,611
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 3MHz
- Max Collector Current :
- 2A
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Current Rating :
- 2A
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Width :
- 3.25mm
- Factory Lead Time :
- 6 Weeks
- Length :
- 8mm
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 100V
- Voltage - Rated DC :
- 80V
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Height :
- 11mm
- Number of Elements :
- 1
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Max Power Dissipation :
- 25W
- Frequency :
- 3MHz
- Radiation Hardening :
- No
- Weight :
- 761mg
- Base Part Number :
- BD237
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 25
- Transition Frequency :
- 3MHz
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- LIFETIME (Last Updated: 15 hours ago)
- Power Dissipation :
- 25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- 600mV
- Datasheets
- BD237STU
BD237STU Documents
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD237STU Description
The BD237STU is a Plastic Medium Power Bipolar Transistor.
BD237STU Features
-
DC Current Gain −
-
hFE = 40 (Min) @ IC = 0.15 Adc
-
Epoxy Meets UL 94 V0 @ 0.125 in
-
ESD Ratings: Human Body Model, 3B; >8000 Vm Machine Model, C; >400 V
-
Pb−Free Packages are Available*
BD237STU Applications
-
Industrial
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