BD237G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

BD237

Power Dissipation :

25W

Polarity/Channel Type :

NPN

Max Power Dissipation :

25W

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Package / Case :

TO-225AA, TO-126-3

Transistor Element Material :

SILICON

Max Collector Current :

2A

Packaging :

Bulk

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Frequency :

3MHz

Peak Reflow Temperature (Cel) :

260

Published :

2003

Gain Bandwidth Product :

3MHz

JESD-609 Code :

e3

Radiation Hardening :

No

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Number of Elements :

1

Surface Mount :

No

Transistor Type :

NPN

Transition Frequency :

3MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 2V

Number of Terminations :

3

Voltage - Rated DC :

80V

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Pbfree Code :

yes

REACH SVHC :

No SVHC

Element Configuration :

Single

hFE Min :

40

Collector Base Voltage (VCBO) :

100V

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

80V

Transistor Application :

AMPLIFIER

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

100μA ICBO

Operating Temperature :

-55°C~150°C TJ

Current Rating :

2A

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

600mV

Mounting Type :

Through Hole