BD237G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 2V

Current - Collector Cutoff (Max) :

100μA ICBO

Frequency :

3MHz

Pin Count :

3

Published :

2003

Package / Case :

TO-225AA, TO-126-3

Packaging :

Bulk

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

3MHz

Time@Peak Reflow Temperature-Max (s) :

40

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

80V

hFE Min :

40

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Base Part Number :

BD237

Collector Emitter Breakdown Voltage :

80V

Current Rating :

2A

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Max Collector Current :

2A

Number of Terminations :

3

Collector Emitter Saturation Voltage :

600mV

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Voltage - Rated DC :

80V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Max Power Dissipation :

25W

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

100V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

3MHz

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

25W

Surface Mount :

No