BD237
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- Mfr.Part #
- BD237
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A SOT32-3
- Stock
- 3,482
- In Stock ：
- 3,482
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 25W
- Number of Terminations :
- 3
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Width :
- 2.7mm
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 100V
- Number of Elements :
- 1
- Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 3MHz
- Power Dissipation :
- 25W
- Transistor Type :
- NPN
- Length :
- 7.8mm
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- VCEsat-Max :
- 0.6 V
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Height :
- 10.8mm
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- Isolated
- Collector Base Voltage (VCBO) :
- 80V
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Base Part Number :
- BD237
- Collector Emitter Voltage (VCEO) :
- 80V
- Current Rating :
- 2A
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- REACH SVHC :
- No SVHC
- Datasheets
- BD237
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD237 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
BD237 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD237 Applications
There are a lot of STMicroelectronics
BD237 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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