BD180G
- Mfr.Part #
- BD180G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 27,082
- In Stock :
- 27,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Transition Frequency :
- 3MHz
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 800mV
- Current Rating :
- -3A
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Base Part Number :
- BD180
- Max Power Dissipation :
- 30W
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Power Dissipation :
- 30W
- Collector Emitter Voltage (VCEO) :
- 80V
- hFE Min :
- 15
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 11.04mm
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- Surface Mount :
- No
- Number of Terminations :
- 3
- Published :
- 2006
- Voltage - Rated DC :
- -80V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Frequency :
- 3MHz
- Width :
- 2.66mm
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Through Hole
- Length :
- 7.74mm
- Datasheets
- BD180G
BD180G Documents
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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