BD180G
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- Mfr.Part #
- BD180G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A TO126
- Stock
- 27,082
- In Stock ：
- 27,082
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-225AA, TO-126-3
- Gain Bandwidth Product :
- 3MHz
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Max Power Dissipation :
- 30W
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- PNP
- Transition Frequency :
- 3MHz
- Power Dissipation :
- 30W
- Number of Pins :
- 3
- Current Rating :
- -3A
- Published :
- 2006
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- BD180
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Surface Mount :
- No
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Pin Count :
- 3
- Height :
- 11.04mm
- Element Configuration :
- Single
- Width :
- 2.66mm
- hFE Min :
- 15
- Voltage - Rated DC :
- -80V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Saturation Voltage :
- 800mV
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 7.74mm
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Frequency :
- 3MHz
- Datasheets
- BD180G
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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