BD180
- Mfr.Part #
- BD180
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 3A TO126
- Stock
- 3,378
- In Stock :
- 3,378
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -3A
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- hFE Min :
- 15
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pin Count :
- 3
- Base Part Number :
- BD180
- Max Power Dissipation :
- 30W
- Length :
- 7.74mm
- Transition Frequency :
- 3MHz
- Pbfree Code :
- yes
- Height :
- 11.04mm
- Surface Mount :
- No
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 3MHz
- Transistor Type :
- PNP
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 3MHz
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Saturation Voltage :
- 800mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1mA ICBO
- Power Dissipation :
- 30W
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 2.66mm
- Voltage - Rated DC :
- -80V
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Datasheets
- BD180
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PNP -65°C~150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD180G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor
BD180G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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