BD13910S
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- Mfr.Part #
- BD13910S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A TO126-3
- Stock
- 9,005
- In Stock ：
- 9,005
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Voltage - Rated DC :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Weight :
- 761mg
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Power Dissipation :
- 1.25W
- Pbfree Code :
- yes
- Factory Lead Time :
- 6 Weeks
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.25W
- Base Part Number :
- BD139
- Collector Emitter Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 80V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Published :
- 2013
- Current Rating :
- 1.5A
- JESD-609 Code :
- e3
- Package / Case :
- TO-225AA, TO-126-3
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Transition Frequency :
- 250MHz
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- hFE Min :
- 40
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BD13910S
BD13910S Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD13910S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1.5A.A transition frequency of 250MHz is present in the part.Collector current can be as low as 1.5A volts at its maximum.
BD13910S Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 250MHz
BD13910S Applications
There are a lot of ON Semiconductor
BD13910S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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