BD13710STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

Published :

2013

Voltage - Rated DC :

60V

Power Dissipation :

1.25W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

hFE Min :

40

Collector Base Voltage (VCBO) :

60V

Polarity/Channel Type :

NPN

Weight :

761mg

JESD-609 Code :

e3

Package / Case :

TO-225AA, TO-126-3

Contact Plating :

Tin

Factory Lead Time :

6 Weeks

Lead Free :

Lead Free

ECCN Code :

EAR99

Mounting Type :

Through Hole

Number of Pins :

3

Transistor Type :

NPN

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

60V

Number of Elements :

1

Mount :

Through Hole

Number of Terminations :

3

Current Rating :

1.5A

Collector Emitter Saturation Voltage :

500mV

Max Power Dissipation :

1.25W

Max Collector Current :

1.5A

Packaging :

Tube

Base Part Number :

BD137

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 months ago)

Operating Temperature :

150°C TJ

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

60V

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

63 @ 150mA 2V

Current - Collector Cutoff (Max) :

100nA ICBO