BCX56TA
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- Mfr.Part #
- BCX56TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT89-3
- Stock
- 1,656
- In Stock ：
- 1,656
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Base Part Number :
- BCX56
- Polarity/Channel Type :
- NPN
- Height :
- 1.65mm
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 150MHz
- Published :
- 2011
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Collector-Base Capacitance-Max :
- 25pF
- Element Configuration :
- Single
- Length :
- 6.7mm
- Terminal Form :
- Flat
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 4
- Max Collector Current :
- 1A
- Packaging :
- Cut Tape (CT)
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 80V
- Qualification Status :
- Not Qualified
- hFE Min :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSSO-F3
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Weight :
- 51.993025mg
- Frequency :
- 150MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 80V
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Transition Frequency :
- 150MHz
- Width :
- 3.7mm
- Power Dissipation :
- 1W
- Package / Case :
- TO-243AA
- Datasheets
- BCX56TA
BCX56TA Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount
BCX56TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX56TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX56TA Applications
There are a lot of Diodes Incorporated
BCX56TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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