BCX5116E6327HTSA1
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- Mfr.Part #
- BCX5116E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 45V 1A SOT89-4
- Stock
- 13,000
- In Stock ：
- 13,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Polarity :
- PNP
- Current - Collector (Ic) (Max) :
- 1 A
- Power - Max :
- 2 W
- Transition Frequency :
- 125
- Package :
- Bulk
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 2V
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Series :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Supplier Device Package :
- PG-SOT89-4-2
- Continuous Collector Current :
- 1
- Power Dissipation :
- 2
- Product Status :
- Active
- Frequency - Transition :
- 125MHz
- Package / Case :
- TO-243AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Datasheets
- BCX5116E6327HTSA1
PNP 150°C (TJ) 100nA (ICBO) TO-243AA Surface Mount
BCX5116E6327HTSA1 Overview
DC current gain in this device equals 100 @ 150mA, 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1 to achieve high efficiency.As a result, the part has a transition frequency of 125.Product comes in PG-SOT89-4-2 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCX5116E6327HTSA1 Features
the DC current gain for this device is 100 @ 150mA, 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 125
the supplier device package of PG-SOT89-4-2
BCX5116E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCX5116E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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