BCX56H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Rad Hardened :

No

Output Power :

Not Required(W)

Number of Elements :

1

Lead Free :

Lead Free

DC Current Gain :

25

Packaging :

Tape and Reel

Contact Plating :

Tin

Operating Temperature Classification :

Military

Transistor Polarity :

NPN

Collector-Base Voltage :

100(V)

Mount :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

80V

Frequency - Transition :

100MHz

Collector Emitter Breakdown Voltage :

80V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

1A

Pin Count :

3 +Tab

Number of Pins :

3

Radiation Hardening :

No

Supplier Device Package :

PG-SOT89

Series :

Automotive, AEC-Q101

Max Breakdown Voltage :

80V

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

100V

Collector Current (DC) :

1(A)

Min Operating Temperature :

-65°C

RoHS Status :

RoHS Compliant

Package / Case :

SOT

Current - Collector Cutoff (Max) :

100nA (ICBO)

Published :

2001

Collector-Emitter Voltage :

80(V)

Polarity :

NPN

Emitter-Base Voltage :

5(V)

Emitter Base Voltage (VEBO) :

5V

Operating Temp Range :

-65C to 150C

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Power Dissipation-Max :

2W

Operating Temperature :

150°C (TJ)

Collector Emitter Voltage (VCEO) :

80V

Power - Max :

2W

Max Operating Temperature :

150°C

Power Dissipation :

2W

Max Collector Current :

1A

Package Type :

SOT-89

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 150mA, 2V

Mounting :

Surface Mount

Category :

Bipolar Power

Frequency :

100MHz

Transistor Type :

NPN