BCX5616QTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Position :

Single

Radiation Hardening :

No

Terminal Form :

Flat

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

80V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Number of Pins :

4

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

5V

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Power Dissipation :

2W

Package / Case :

TO-243AA

Operating Temperature :

-65°C~150°C TJ

Additional Feature :

High Reliability

Transition Frequency :

150MHz

Configuration :

Single

Max Collector Current :

1A

JESD-30 Code :

R-PSSO-F3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Terminal Finish :

Matte Tin (Sn)

Power - Max :

2W

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

80V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 2V

Case Connection :

COLLECTOR

Published :

2006

Number of Terminations :

3

Frequency :

150MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Power Dissipation :

1W

Collector-Base Capacitance-Max :

25pF