BCX5610TA
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- Mfr.Part #
- BCX5610TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT89-3
- Stock
- 3,696
- In Stock ：
- 3,696
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector-Base Capacitance-Max :
- 25pF
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- Length :
- 4.6mm
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Frequency :
- 150MHz
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-243AA
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- hFE Min :
- 63
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 150MHz
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Height :
- 1.5mm
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 4
- JESD-30 Code :
- R-PSSO-F3
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Additional Feature :
- High Reliability
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 150MHz
- Base Part Number :
- BCX5610
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Weight :
- 51.993025mg
- Width :
- 2.6mm
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Datasheets
- BCX5610TA
BCX5610TA Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5610TA Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCX5610TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5610TA Applications
There are a lot of Diodes Incorporated
BCX5610TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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