BCX5610TA
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- Mfr.Part #
- BCX5610TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT89-3
- Stock
- 3,696
- In Stock ：
- 3,696
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Element Configuration :
- Single
- Additional Feature :
- High Reliability
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Form :
- Flat
- Published :
- 2012
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-F3
- Transition Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Max Power Dissipation :
- 1W
- Package / Case :
- TO-243AA
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Width :
- 2.6mm
- Height :
- 1.5mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 150MHz
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BCX5610
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Weight :
- 51.993025mg
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Collector-Base Capacitance-Max :
- 25pF
- Emitter Base Voltage (VEBO) :
- 5V
- Length :
- 4.6mm
- hFE Min :
- 63
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Datasheets
- BCX5610TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5610TA Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BCX5610TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5610TA Applications
There are a lot of Diodes Incorporated
BCX5610TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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