BCX55TA
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- Mfr.Part #
- BCX55TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89-3
- Stock
- 253
- In Stock ：
- 253
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.6mm
- Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 1W
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Length :
- 4.6mm
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-243AA
- Terminal Form :
- Flat
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCX55
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Weight :
- 51.993025mg
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -65°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 2.6mm
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 1A
- JESD-30 Code :
- R-PSSO-F3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Collector-Base Capacitance-Max :
- 25pF
- Frequency :
- 150MHz
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2012
- Datasheets
- BCX55TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX55TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX55TA Applications
There are a lot of Diodes Incorporated
BCX55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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