BCX55H6327XTSA1

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Mfr.Part #
BCX55H6327XTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 60V 1A SOT89
Stock
1,675
In Stock :
1,675

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Max Frequency :
100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Collector Emitter Voltage (VCEO) :
60V
Length :
4.5mm
Factory Lead Time :
12 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
2.5mm
Max Power Dissipation :
2W
Series :
Automotive, AEC-Q101
Collector Emitter Saturation Voltage :
500mV
Package / Case :
TO-243AA
Mount :
Surface Mount
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
60V
Packaging :
Tape and Reel (TR)
Max Collector Current :
1A
Contact Plating :
Tin
Collector Emitter Breakdown Voltage :
60V
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Frequency - Transition :
100MHz
Element Configuration :
Single
Emitter Base Voltage (VEBO) :
5V
Height :
1.6mm
ECCN Code :
EAR99
Published :
2011
Datasheets
BCX55H6327XTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCX55H6327XTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-243AA, Number of Pins:3, Operating Temperature:150°C TJ, BCX55H6327XTSA1 pinout, BCX55H6327XTSA1 datasheet PDF, BCX55H6327XTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCX55H6327XTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCX55H6327XTSA1


NPN 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

BCX55H6327XTSA1 Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Maximum collector currents can be below 1A volts.

BCX55H6327XTSA1 Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


BCX55H6327XTSA1 Applications


There are a lot of Infineon Technologies
BCX55H6327XTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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