BCX5516TA
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- Mfr.Part #
- BCX5516TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89-3
- Stock
- 2,919
- In Stock ：
- 2,919
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Additional Feature :
- High Reliability
- Operating Temperature :
- -65°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current Rating :
- 1A
- Width :
- 2.6mm
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 500mV
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Collector-Base Capacitance-Max :
- 25pF
- Published :
- 2011
- Terminal Form :
- Flat
- Transistor Element Material :
- SILICON
- Base Part Number :
- BCX5516
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSSO-F3
- Package / Case :
- TO-243AA
- Packaging :
- Cut Tape (CT)
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 1W
- Voltage - Rated DC :
- 60V
- Lead Free :
- Contains Lead
- Weight :
- 51.993025mg
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 60V
- Frequency :
- 150MHz
- Pbfree Code :
- yes
- Height :
- 1.6mm
- Element Configuration :
- Single
- Length :
- 4.6mm
- Gain Bandwidth Product :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Datasheets
- BCX5516TA
BCX5516TA Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Cut Tape (CT) Surface Mount
BCX5516TA Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 1A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
BCX5516TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 150MHz
BCX5516TA Applications
There are a lot of Diodes Incorporated
BCX5516TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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