BCX5516E6433HTMA1
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- Mfr.Part #
- BCX5516E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89
- Stock
- 4,795
- In Stock ：
- 4,795
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Flat
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- Number of Pins :
- 4
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 2W
- Base Part Number :
- BCX55
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Max Collector Current :
- 1A
- Terminal Position :
- Single
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Published :
- 2008
- Package / Case :
- TO-243AA
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 1A
- JESD-30 Code :
- R-PSSO-F3
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 2W
- Frequency :
- 100MHz
- Datasheets
- BCX5516E6433HTMA1
BCX5516E6433HTMA1 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5516E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
BCX5516E6433HTMA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCX5516E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCX5516E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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