BCX5516E6433HTMA1

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Mfr.Part #
BCX5516E6433HTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN 60V 1A SOT89
Stock
4,795
In Stock :
4,795

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2008
Current - Collector Cutoff (Max) :
100nA ICBO
Transistor Application :
AMPLIFIER
Configuration :
Single
Mount :
Surface Mount
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
60V
Number of Pins :
4
Mounting Type :
Surface Mount
Radiation Hardening :
No
Operating Temperature :
150°C TJ
Current - Collector (Ic) (Max) :
1A
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
60V
Emitter Base Voltage (VEBO) :
5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
2W
Power Dissipation :
2W
Frequency :
100MHz
Base Part Number :
BCX55
Transistor Type :
NPN
Terminal Form :
Flat
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
NPN
Terminal Position :
Single
Number of Terminations :
3
Max Collector Current :
1A
Collector Base Voltage (VCBO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 2V
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PSSO-F3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Package / Case :
TO-243AA
Transistor Element Material :
SILICON
Transition Frequency :
100MHz
Datasheets
BCX5516E6433HTMA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BCX5516E6433HTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Base Part Number:BCX55, Number of Terminations:3, Package / Case:TO-243AA, BCX5516E6433HTMA1 pinout, BCX5516E6433HTMA1 datasheet PDF, BCX5516E6433HTMA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BCX5516E6433HTMA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BCX5516E6433HTMA1


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount

BCX5516E6433HTMA1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.

BCX5516E6433HTMA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz


BCX5516E6433HTMA1 Applications


There are a lot of Infineon Technologies
BCX5516E6433HTMA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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