BCX5510TA
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- Mfr.Part #
- BCX5510TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89-3
- Stock
- 8,222
- In Stock ：
- 8,222
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Gain Bandwidth Product :
- 150MHz
- Additional Feature :
- High Reliability
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1W
- Base Part Number :
- BCX5510
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 500mV
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Width :
- 2.6mm
- Transition Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Height :
- 1.6mm
- Frequency :
- 150MHz
- Collector-Base Capacitance-Max :
- 25pF
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Weight :
- 51.993025mg
- Length :
- 4.6mm
- Max Breakdown Voltage :
- 60V
- Published :
- 2011
- JESD-30 Code :
- R-PSSO-F3
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Datasheets
- BCX5510TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5510TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX5510TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5510TA Applications
There are a lot of Diodes Incorporated
BCX5510TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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