BCX5510TA
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- Mfr.Part #
- BCX5510TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A SOT89-3
- Stock
- 8,222
- In Stock ：
- 8,222
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transition Frequency :
- 150MHz
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 1A
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Published :
- 2011
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Base Part Number :
- BCX5510
- Max Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Frequency :
- 150MHz
- Weight :
- 51.993025mg
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Collector-Base Capacitance-Max :
- 25pF
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Flat
- Collector Base Voltage (VCBO) :
- 60V
- Length :
- 4.6mm
- Transistor Type :
- NPN
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 1W
- Width :
- 2.6mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Height :
- 1.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 150MHz
- Datasheets
- BCX5510TA
BCX5510TA Documents
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5510TA Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
BCX5510TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5510TA Applications
There are a lot of Diodes Incorporated
BCX5510TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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