BCX5410TA
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- Mfr.Part #
- BCX5410TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT89-3
- Stock
- 22,227
- In Stock ：
- 22,227
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 4.6mm
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 4
- Height :
- 1.6mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BCX54
- Number of Elements :
- 1
- hFE Min :
- 63
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- 45V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Width :
- 2.6mm
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- JESD-609 Code :
- e3
- Weight :
- 51.993025mg
- Package / Case :
- TO-243AA
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Additional Feature :
- High Reliability
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Flat
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Max Collector Current :
- 1A
- Collector-Base Capacitance-Max :
- 25pF
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 500mV
- Max Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Frequency :
- 150MHz
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-F3
- Datasheets
- BCX5410TA
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX5410TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX5410TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5410TA Applications
There are a lot of Diodes Incorporated
BCX5410TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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