BCX54,115
- Mfr.Part #
- BCX54,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT89
- Stock
- 204,875
- In Stock :
- 204,875
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.25W
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Power Dissipation :
- 1.35W
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 45V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Case Connection :
- COLLECTOR
- Frequency :
- 180MHz
- Length :
- 4.6mm
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Published :
- 2007
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Width :
- 2.6mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Height :
- 1.6mm
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Power - Max :
- 1.25W
- Package / Case :
- TO-243AA
- Pin Count :
- 3
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BCX54
- Transition Frequency :
- 180MHz
- Max Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 180MHz
- Datasheets
- BCX54,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX54,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX54,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54,115 Applications
There are a lot of Nexperia USA Inc.
BCX54,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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