BCX54,115
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- Mfr.Part #
- BCX54,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 45V 1A SOT89
- Stock
- 204,875
- In Stock ：
- 204,875
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Width :
- 2.6mm
- Max Collector Current :
- 1A
- Package / Case :
- TO-243AA
- Base Part Number :
- BCX54
- Max Power Dissipation :
- 1.25W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Flat
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transition Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Frequency :
- 180MHz
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Length :
- 4.6mm
- Power Dissipation :
- 1.35W
- Power - Max :
- 1.25W
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Height :
- 1.6mm
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Lead Free :
- Lead Free
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 180MHz
- Case Connection :
- COLLECTOR
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BCX54,115
BCX54,115 Documents
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX54,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX54,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54,115 Applications
There are a lot of Nexperia USA Inc.
BCX54,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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