BCX54,115
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- Mfr.Part #
- BCX54,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- NEXPERIA BCX54 - SMALL SIGNAL BI
- Stock
- 19,835
- In Stock ：
- 19,835
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 180MHz
- Power Dissipation :
- 1.35W
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Power - Max :
- 1.25W
- Max Collector Current :
- 1A
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 180MHz
- Max Power Dissipation :
- 1.25W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Form :
- Flat
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mount :
- Surface Mount
- Package / Case :
- TO-243AA
- Contact Plating :
- Tin
- Height :
- 1.6mm
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Base Part Number :
- BCX54
- Width :
- 2.6mm
- Gain Bandwidth Product :
- 180MHz
- Length :
- 4.6mm
- Transistor Type :
- NPN
- Datasheets
- BCX54,115
BCX54,115 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
BCX54,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 180MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 1A volts at its maximum.
BCX54,115 Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
BCX54,115 Applications
There are a lot of Nexperia USA Inc.
BCX54,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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