BCX53H6327XTSA1
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- Mfr.Part #
- BCX53H6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 1,112
- In Stock ：
- 1,112
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Published :
- 2006
- Transition Frequency :
- 125MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Frequency :
- 125MHz
- Power Dissipation :
- 2W
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Width :
- 2.5mm
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Height :
- 1.6mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Number of Elements :
- 1
- Max Power Dissipation :
- 2W
- Package / Case :
- TO-243AA
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 80V
- Length :
- 4.5mm
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 500mV
- Datasheets
- BCX53H6327XTSA1
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX53H6327XTSA1 Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 125MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 1A volts.
BCX53H6327XTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCX53H6327XTSA1 Applications
There are a lot of Infineon Technologies
BCX53H6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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