BCX5316TA
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- Mfr.Part #
- BCX5316TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89-3
- Stock
- 570
- In Stock ：
- 570
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 15 Weeks
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -80V
- Width :
- 2.5mm
- Collector Emitter Saturation Voltage :
- -500mV
- Current - Collector (Ic) (Max) :
- 1A
- Emitter Base Voltage (VEBO) :
- -5V
- Max Power Dissipation :
- 1W
- Base Part Number :
- BCX53
- Gain Bandwidth Product :
- 150MHz
- Continuous Collector Current :
- -1A
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 150MHz
- Terminal Form :
- Flat
- Additional Feature :
- High Reliability
- Power Dissipation :
- 1W
- Current Rating :
- -1A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Frequency :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Max Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- -100V
- Max Junction Temperature (Tj) :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- -80V
- Packaging :
- Cut Tape (CT)
- Height :
- 1.6mm
- Operating Temperature :
- -65°C~150°C TJ
- Package / Case :
- TO-243AA
- Collector Emitter Breakdown Voltage :
- -80V
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Published :
- 2006
- Length :
- 4.5mm
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Pin Count :
- 3
- Weight :
- 51.993025mg
- hFE Min :
- 25
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Termination :
- SMD/SMT
- Datasheets
- BCX5316TA
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
BCX5316TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCX5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCX5316TA Applications
There are a lot of Diodes Incorporated
BCX5316TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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