BCX5310E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Polarity :

PNP

JESD-609 Code :

e3

Current - Collector (Ic) (Max) :

1 A

Case Connection :

COLLECTOR

RoHS :

Compliant

Lead Free :

Contains Lead

Manufacturer :

Rochester Electronics LLC

Gain Bandwidth Product :

125 MHz

Terminal Position :

Single

Supplier Device Package :

PG-SOT89-4-2

Current Rating :

-1 A

Package / Case :

TO-243AA

Radiation Hardening :

No

Qualification Status :

COMMERCIAL

Number of Pins :

4

Min Operating Temperature :

-65 °C

Voltage - Collector Emitter Breakdown (Max) :

80 V

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

80 V

Surface Mount :

yes

hFE Min :

25

Frequency - Transition :

125MHz

Collector Emitter Voltage (VCEO) :

80 V

Package :

Bulk

Max Power Dissipation :

2 W

Max Operating Temperature :

150 °C

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Power - Max :

2 W

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Product Status :

Active

Transistor Application :

SWITCHING

Voltage Rating (DC) :

-80 V

Terminal Form :

Flat

Collector Current-Max (IC) :

1 A

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

DC Current Gain-Min (hFE) :

63

Collector-Emitter Voltage-Max :

80 V

Mount :

Surface Mount

Element Configuration :

Single

Reach Compliance Code :

Unknown

Packaging :

Cut Tape

JESD-30 Code :

R-PSSO-F3

Number of Elements :

1

Current - Collector Cutoff (Max) :

100nA (ICBO)

Package Shape :

RECTANGULAR

Max Breakdown Voltage :

80 V

Collector Base Voltage (VCBO) :

100 V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA, 2V

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

5 V

Continuous Collector Current :

1

Configuration :

Single

Transition Frequency :

125 MHz

Max Collector Current :

1 A

Transistor Element Material :

SILICON

Number of Terminals :

3