BCX53-16
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- Mfr.Part #
- BCX53-16
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 729
- In Stock ：
- 729
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 1.6mm
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 150MHz
- Max Junction Temperature (Tj) :
- 150°C
- Mounting Type :
- Surface Mount
- Current Rating :
- -1A
- Continuous Collector Current :
- -1A
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- -500mV
- Additional Feature :
- High Reliability
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Terminal Form :
- Flat
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- BCX53
- Pin Count :
- 3
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -80V
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- -80V
- Weight :
- 51.993025mg
- Mount :
- Surface Mount
- Width :
- 2.5mm
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- Max Collector Current :
- 1A
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 150MHz
- hFE Min :
- 25
- Power Dissipation :
- 1W
- Max Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Collector Base Voltage (VCBO) :
- -100V
- Packaging :
- Cut Tape (CT)
- Published :
- 2006
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 1A
- Package / Case :
- TO-243AA
- Length :
- 4.5mm
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- -80V
- Datasheets
- BCX53-16
BCX53-16 Documents
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Cut Tape (CT) Surface Mount
BCX5316TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.During maximum operation, collector current can be as low as 1A volts.
BCX5316TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
BCX5316TA Applications
There are a lot of Diodes Incorporated
BCX5316TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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