BCX53-16,115
- Mfr.Part #
- BCX53-16,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1A SOT89
- Stock
- 935,469
- In Stock :
- 935,469
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- BCX53
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.3W
- Ambient Temperature Range High :
- 150°C
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 145MHz
- Gain Bandwidth Product :
- 145MHz
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- hFE Min :
- 100
- Collector Emitter Saturation Voltage :
- -500mV
- Height :
- 1.6mm
- Pin Count :
- 3
- Terminal Position :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- -100V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- -80V
- Max Junction Temperature (Tj) :
- 150°C
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-243AA
- Transistor Type :
- PNP
- Published :
- 2011
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1.35W
- Number of Elements :
- 1
- Datasheets
- BCX53-16,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
BCX53-16,115 Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
BCX53-16,115 Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 145MHz
BCX53-16,115 Applications
There are a lot of Nexperia USA Inc.
BCX53-16,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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